奈米生醫電子實驗室 (NanoBioElectronics Lab)
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Publications (2008-2018, Total SCI IF=127.0)
(1)
Chih-Wei
Chen, Ru-Zheng Lin, Li-Chuan Chiang, Fu-Ming Pan,
Jeng-Tzong
Sheu
*
(2018, Nov). Junctionless gate-all-around nanowire field-effect transistors with an extended gate in biomolecule detection.
Japanese Journal of Applied Physics
. (Accepted).
MOST 106-2221-E-009-158.
(SCI IF:
1.452)
(2)
Chih-Wei
Chen, Bak-Sau Yip, Fu-Ming Pan
,
Jeng-Tzong Sheu
*
(2018, May). Optimization of Nanobelt Field Effect Transistor with a Capacitive Extended Gate for Use as a Biosensor.
ECS Journal of Solid State Science and Technology
, 7 (7) Q3172-Q3179. MOST 106-2221-E-009-158.
(
SCI IF:1.808)
(3)
Ru-Zheng
Lin, Kuang-Yang Cheng, Fu-Ming Pan, and
Jeng-Tzong Sheu
* (2017, Nov). Selective Deposition of Multiple Sensing Materials on Si Nanobelt Devices through Plasma-Enhanced Chemical Vapor Deposition and Device-Localized Joule Heating.
ACS Appl. Mater. Interfaces
, 9, 39935-39939. (SCI). MOST 106-2221-E-009-158
.
(SCI IF: 8.097
)
(4)
Chia-
Tsung
Tso
, Tung-Yu Liu, Fu-Ming Pan, and
Jeng-Tzong
Sheu
*
(
2017,Mar).
Temperature- and doping-concentration-dependent characteristics of
junctionless
gate-all-around polycrystalline-silicon thin-film transistors. Japanese Journal of Applied Physics 56, 04CD14
.
(SCI
IF:
1.452)
(5)
Nhan
Ai Tran, Fu-Ming Pan and
Jeng-Tzong Sheu
* (2016, Nov). Hydrogen gas sensors from polysilicon nanobelt devices selectively modified with sensing materials.
Nanotechnology
, 27, 505604.
(
SCI IF:
3.404)
(6)
Nhan
Ai Tran, Chen-Hsiang Sang, Fu-Ming Pan, and
Jeng-Tzong Sheu
* (2016, Mar). Controlled functionalization of a double-junction n
+
/n
-
/n
+
polysilicon nanobelt for hydrogen sensing application.
Japanese Journal of Applied Physics
, 55, 04EM01-1~4.
(
SCI IF:
1.452
)
(7)
Chen-Hsiang
Sang, Shu-Jen Chou, F.-M. Pan,
Jeng-Tzong Sheu
* (2016, Jan). Fluorescence enhancement and multipleprotein detection in ZnO nanostructure microfluidic devices.
Biosensors and Bioelectronics
, 75, 285-292.
(
SCI IF: 8.173)
(8)
Tung-Yu
Liu, Fu-Ming Pan, and
Jeng-Tzong Sheu
* (2015, Jun). Characteristics of Gate-All-Around Junctionless Polysilicon Nanowire Transistors With Twin 20-nm Gates.
IEEE
Journal
of Electron Devices Scociety
, 3, 405-409. MOST 101-2221-E-009-071-MY3.
(
SCI IF:
2.696)
(9)
Tu-Ngoc
Lam, Yu-Ling Lai, Chih-Han Chen, Po-Hung Chen, Der-Hsin Wei,Hong-Ji Lin, C.T. Chen,
Jeng-Tzong Sheu
*,Yao-Jane Hsu* (2015, May). Interfacial symmetry of Co–Alq3–Co hybrid structures for effectivespin filtering
.
Applied Surface Science
, 354, 90-94.
(SCI IF:4.439)
(10)
Chia-Tsung
Tso, Tung-Yu Liu, and
Jeng-Tzong Sheu
* (2015, Apr). Gate-all-around poly-Si nanowire junctionless thin-film transistors with multiple channels.
Japanese Journal of Applied Physics
, 54, 06FG06-1~3.
(SCI IF:
1.452
)
(11)
Tu-Ngoc
Lam, Yu-Ling Lai, Chih-Han Chen, Po-Hung Chen, Yuet-Loy Chan, Der-Hsin Wei, Hong-Ji Lin, C. T. Chen, Jeng-Han Wang*,
Jeng-Tzong Sheu
*, and Yao-Jane Hsu* (2014, Dec). Effectiveness of organic molecules for spin filtering in an organic spin valve: Reaction-induced spin polarization for Co atop Alq3.
Phys. Rev. B
, 91, 041204-1-7.
(
SCI IF:
5.1)
(12)
Chun-Yen
Lai, Tzu-Chiao Chien, Ting-Yi Lin, Teng Ke, Shih-Han Hsu, Yun-Ju Lee, Chien-ying
Su, Jeng-Tzong
Sheu and Ping-Hung Yeh* (2014, Sep). Intensify the application of ZnO-based nanodevices in humid environment: O2/H2 plasma suppressed the spontaneous reaction of amorphous ZnO nanowires.
Nanoscale Research Letters
, 9, 281-285.
(SCI IF:
3.125)
(13)
Hao
Heng Liu, Tzung Han Lin,
Jeng-Tzong Sheu
* (2014, Mar). Enhancement of detection by selective modification of silicon nanobelt field-effect transistors via localized Joule heating.
Sensors and Actuators B-Chemical
, 192,
111-116.
(
SCI IF: 5.667)
(14)
Hao
Heng Liu, Tzung Han Lin, and
Jeng-Tzong Sheu
* (2013, Nov). Self-Assembled Monolayer-Based Selective Modification on Polysilicon Nanobelt Devices.
ACS Applied Materials & Interfaces
, 5,
10048-10053.
(
SCI IF: 8.097)
(15)
Tung-Yu
Liu, Shen-Chuan Lo, and
Jeng-Tzong Sheu
* (2013, Apr). Gate-All-Around Single-Crystal-Like Poly-Si Nanowire TFTs With a Steep-Subthreshold Slope.
IEEE Electron Device Letters
, 34, 523-525
.
(SCI IF:3.433
)
(16)
Po-Chun
Huang, Lu-An Chen, Chen-Chia Chen,
Jeng-Tzong Sheu
* (2012, Sep). Minimizing variation in the electrical characteristics of gate-all-around thin film transistors through the use of multiple-channel nanowire and NH
3
plasma treatment.
Microelectronic Engineering
, 91, 54–58.
(SCI IF: 2.02)
(17)
C. C. Chen, Y. S. Lin, C. H. Sang, and
J.-T.
Sheu
* (2011, Nov). Localized Joule Heating as a Mask-Free Technique for the Local Synthesis of
ZnO
Nanowires on Silicon
Nanodevices
.
Nano Letters
, 11, 4736-4741. NSC 97-2221-E-009-157-MY3.
(SCI IF:12.08
)
(18)
C. C. Chen, Y. Z. Chen, Y. J. Huang, and
J.-T. Sheu
* (2011, Mar). Using silicon nanowire devices to detect adenosine triphosphate liberated from electrically stimulated HeLa cells.
Biosensors and Bioelectronnics
, 26, 2323-2328. (SCI). NSC 97-2221-E-009-157-MY3. (SCI IF: 8.173)
(19)
T. H. Lin, C. W. Lin, H. H. Liu, J. T. Sheu, and W. H. Hung* (2011, Mar). Potential-controlled electrodeposition of gold dendrites in the presence of cysteine.
Chemical Communications
, 47, 2044-2046. (SCI IF: 6.290)
(20)
Po-Chun Huang, Lu-An Chen, and
Jeng-Tzong Sheu
* (2010, Mar). Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory.
IEEE Electron Device Letters
, P.216-218. (SCI). NSC 97-2221-E-009-157-MY3.
(
SCI IF:3.433)
(21)
C. H. Wu,
J.-T. Sheu
* and T. S. Chao (2009, 5 ). Novel Field-induce gray level selective pattering of SAM on SiO2 by scanning probe bond-breaking lithography.
Japanese Journal of Applied Physics
, 48, 04C133-1~5. (SCI). NSC 97-2221-E-009-213.
(
SCI IF:
1.452
)
(22)
Mao-Yuan Chiu, Chen-Chia Chen, Jeng-Tzong Sheu, Kung-Hwa Wei* (2009, Aug). An optical programming/electrical erasing memory drvice: Organic thin filme transistors incorporating core/shell CdSe@ZnSe quantum dots and ploy(3-hexylthiophene).
Organics Electronics
, 769-774. (SCI). NSC 97-2218-E-009-004.
).
(SCI IF:3.680)
(23)
Chien-Jung Huang, Fu-Ming Pan, Tai-Cheng Tzeng, Li Chang, and Jeng-Tzong Sheu
*
(2009, Jun). Growth and Field Emission of Reactive Sputtered Pd-PdO Core-Shell Nanoflasks on Platinum.
Journal of The Electrochemical Society
. (SCI IF:3.662)
(24)
Ko Shing Chang, Chen Chia Chen,
Jeng
-
Tzong Sheu
*, Yaw-Kuan Li (2009, Mar). Detection of an uncharged steroid with a silicon nanowire field-effect transistor.
Sensors and Actuators B: Chemical
, 148~153. (SCI). NSC 97-2221-E-009-157-MY3.
(
SCI IF: 5.667)
(25)
J.-T. Sheu
*, Po-Chun Huang, Tzu-Shiun Sheu, Chen-Chia Chen and Lu-An Chen (2009, Feb). Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors.
IEEE Electronic Device Letters
, 138~140. (SCI). NSC 97-2221-E-009-157-MY3.
(
SCI IF:3.433)
(26)
Ching-Mao Huang, Yung-Sheng Liu, Chen-Chia Chen, Kung-Hwa Wei* and
J.-T. Sheu
* (2008, Jun). Electrical Bistable Memory Device Based on a Poly(styrene-b-4-vinylpyridine) Nanostructured Diblock Copolymer Thin Film.
Applied Physics Letters
, 93, PP. 203303. (SCI). NSC 96-2221-E-213-009. (SCI IF:3.495)
(27)
Te-Ming Chen, Jui-Yi Hung, Fu-Ming Pan, L. Chang, J.-T. Sheu, and Shich-Chuan Wu (2008, Nov). Fabrication and Field-Emission Characteristics of TiN Nanorods with a Concave Top Surface.
Electrochemical and Solid-State Letters
, pp. K40-K43. (SCI). NSC 96-2221-E-213-9. (SCI IF:2.1)
(28)
Chen-Chia Chen, Mao-Yuan Chiu,
Jeng-Tzong Sheu
*, and Kung-Hwa Wei (2008, Sep). Photoresponses and memory effects in organic thin film transistors incorporating poly(3-hexylthiophene)/CdSe quantum dots.
Applied Physics Letters
, 92, pp. 143105. (SCI). NSC 96-2221-E-009-213.
(SCI
IF:3.495)
(29)
J.-T. Sheu
*, C.C. Chen, K.S. Chang, Y.-K. Li, (2008, Apr). A possibility of detection of the non-charge based analytes using ultra-thin body field-effect transistors.
Biosensors and Bioelectronics
, 1883–1886. (SCI). NSC 96-2221-E-009-213.
(SCI IF: 8.173)
Book Chapter
Po-Chun Huang, Lu-An Chen, C. C. Chen, and
Jeng-Tzong Sheu
*
. Modeling and Minimizing Variations of Gate-All-Around Multiple-Channel Nanowire TFTs.
Nanoelectronic Device Applications Handbook
(ISBN: 1466565233). Boca Raton, FL, USA: CRC Press . Jun, 2013: 727-735.
Patents (2013-2018)
(1)
SENSING ELEMENT INTEGRATING SILICON NANOWIRE GATED-DIODES, MANUFACTURING METHOD AND DETECTING SYSTEM THEREOF,
US8482304 B2, 2013
.
(2)
光電
記憶體元件、其製造以及量測方法
, I394306, 2013.(
中華民國專利
)
(3)
感
測元件、製造方法及其生物檢測系統
, I383144, 2013. (
中華民國專利
)
(4)
結合
矽奈米線閘極二極體之感測元件、製造方法及其檢測系統
, I424160
, 2014. (
中華民國專利
)
(5)
生物感測
系統
(BIOLOGICAL
SENSING
SYSTEM), I637903, 2018.
(
中華民國專利
)
(6)
BIOLOGICAL SENSING SYSTEM, US
2018/0106796A1. (US patent pending)
(7)
利用奈米元件區域焦耳熱選擇性感測材料沉積以形成奈米感測晶片的方法並作為一奈米感測
晶片
,
2018.(
中華民國
專利
申請中
)
(8)
METHOD
FOR FORMING NANO SENSING CHIP BY SELECTIVE DEPOSITION
OF SENSING
MATERIALS THROUGH DEVICE LOCALIZED JOULE HEATING
AND NANO
SENSING CHIP THEREOF
, US Patent Application No. 16052484, 2018.
(US patent
pending)
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